Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C
No. 8
pp. 1183-1188
Type of Manuscript:
Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Gate Tunneling Simulation Keyword: semiconductor materials and devices, silicon dioxide, Boltzmann equation, spherical-harmonics expansion, |