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IEICE Trans

Laredj BELABAS

Small-Signal High Frequency MOSFET Model Considering Two-Field-Dependent Mobility Effect
Laredj BELABAS Nobuo FUJII Shigetaka TAKAGI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1993/02/25
Vol. E76-A  No. 2  pp. 193-203
Type of Manuscript:  Special Section PAPER (Special Section on High-Speed Analog Circuits and Signal Processing)
Category: 
Keyword: 
MOSFET, high frequency model, mobility, 
 Summary | Full Text:PDF