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IEICE Trans

Kunsik PARK

Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices
Doohyung CHO Kunsik PARK Jongil WON Sanggi KIM Kwansgsoo KIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 439-445
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
silicon carbide (SiC), junction termination extension (JTE), edge termination, power device, 
 Summary | Full Text:PDF