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IEICE Trans

Koichi KITAHARA

AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications
Akio WAKEJIMA Arijit BOSE Debaleen BISWAS Shigeomi HISHIKI Sumito OUCHI Koichi KITAHARA Keisuke KAWAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2022/10/01
Vol. E105-C  No. 10  pp. 457-465
Type of Manuscript:  INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
Category: 
Keyword: 
AlGaN/GaN, high electron mobility transistor (HEMT), GaN-on-Si, 3C-SiC intermediate layer, microwave amplifier, 
 Summary | Full Text:PDF