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IEICE Trans

Kiyoshi UCHIYAMA

Electrical Properties of Ba0.5Sr0.5Ta2O6 Thin Film Fabricated by Sol-Gel Method
Li LU Masahiro ECHIZEN Takashi NISHIDA Kiyoshi UCHIYAMA Yukiharu URAOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/10/01
Vol. E93-C  No. 10  pp. 1511-1515
Type of Manuscript:  Special Section PAPER (Special Section on Frontier of Thin-Film Transistor Technology)
Category: 
Keyword: 
Ba0.5Sr0.5Ta2O6, gate oxide, dielectric constant, leakage current, 
 Summary | Full Text:PDF