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IEICE Trans

Keiichi MURAYAMA

Temperature Compensation Technique of InGaP/GaAs Power HBT with Novel Bias Circuit Using Schottky Diodes
Keiichi MURAYAMA Masaaki NISHIJIMA Manabu YANAGIHARA Tsuyoshi TANAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1379-1382
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
InGaP/GaAs HBT, bias circuit, temperature compensation, 
 Summary | Full Text:PDF