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IEICE Trans

Junichi NAKASHIMA

Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions
Masataka MIYAKE Junichi NAKASHIMA Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/10/01
Vol. E95-C  No. 10  pp. 1682-1688
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high-level injection, p-i-n diode, reverse recovery, carrier distribution, compact model, circuit simulation, SPICE, 
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