Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-CNo. 5pp. 683-687 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: metamorphic HEMT, InP-composite channel MHEMT, gate recess, impact ionization effect,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/05/01 Vol. E89-CNo. 5pp. 616-621 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Compound Semiconductor Devices Keyword: MHEMT, InP-composite channel, impact ionization coefficient, output conductance,