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IEICE Trans

Jongho LEE

Characteristics of MOSFET with Non-overlapped Source-Drain to Gate
Hyunjin LEE Sung-il CHANG Jongho LEE Hyungcheol SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1079-1085
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
non-overlap, 50 nm MOSFET, SCE, extended source/drain, 
 Summary | Full Text:PDF