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IEICE Trans

John M. DRYNAN

TiN as a Phosphorus Outdiffusion Barrier Layer for WSix/Doped-Polysilicon Structures
John M. DRYNAN Hiromitsu HADA Takemitsu KUNIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4  pp. 613-625
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
barrier, outdiffusion, phosphorus, polysilicon, titanium nitride, tungsten silicide, 
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