Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C
No. 10
pp. 1289-1293
Type of Manuscript:
INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Hetero-FETs & Their Integrated Circuits Keyword: high-electron mobility transistor, hydrogen, reliability, InP, GaAs, |