Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/08/25 Vol. E83-CNo. 8pp. 1349-1355 Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Numerics Keyword: NURBS surface, mesh generation, advancing front, topography simulation, capacitance extraction,
Atomic Scale Simulation of Extended Defects: Monte Carlo Approach Jaehee LEETaeyoung WON
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/08/25 Vol. E83-CNo. 8pp. 1253-1258 Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Process Modeling and Simulation Keyword: extended defects, arsenic precipitation, Monte Carlo simulation, bimolecular kinetics,