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IEICE Trans

Isao MIYASHITA

Low ACPR Characteristics for WCDMA Applications of SiGe:C HBT Devices with Small Emitter Capacitance
Masao KONDO Isao MIYASHITA Tadashi KURAMAOTO Makoto KOSHIMIZU Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/04/01
Vol. E89-C  No. 4  pp. 455-465
Type of Manuscript:  Special Section PAPER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
Category: 
Keyword: 
bipolar transistor, SiGe HBT, SiGe:C, power amplifier, ACPR, PAE, 
 Summary | Full Text:PDF