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IEICE Trans

Hitoshi SUMIDA

Lateral IGBT Structure on the SOI Film with the Collector-Short Region for Improved Blocking Capability
Hitoshi SUMIDA Atsuo HIRABAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 593-596
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
LIGBT, SOI, blocking capability, collector-short region, leakage current, 
 Summary | Full Text:PDF
The Substrate Bias Effect on the Static and Dynamic Characteristics of the Laterall IGBT on the Thin SOI Film
Hitoshi SUMIDA Atsuo HIRABAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/25
Vol. E77-C  No. 9  pp. 1464-1471
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
SOI, lateral IGBT, substrate bias, blocking capability, switching characteristics, 
 Summary | Full Text:PDF