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IEICE Trans

Hiroyuki TAKASHINO

Analysis of Injection Current with Electron Temperature for High-K Gate Stacks
Yasuyuki OHKURA Hiroyuki TAKASHINO Shoji WAKAHARA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 325-329
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
high-K, gate injection current, simulation, electron temperature, 
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