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IEICE Trans

Hiroyuki OGATA

Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate
Hiroyuki OGATA Kenji ICHIJO Kenji KONDO Akito HARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/02/01
Vol. E96-C  No. 2  pp. 285-288
Type of Manuscript:  BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
poly-Si, TFT, double-gate, glass substrate, 
 Summary | Full Text:PDF