IEICE Trans

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IEICE Trans

Hiroyuki MATSUNAMI

Hetero-Interface Properties of SiO₂/4H-SiC on Various Crystal Orientations Hiroyuki MATSUNAMI Tsunenobu KIMOTO Hiroshi YANO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2003/10/01 Vol. E86-C No. 10 pp. 1943-1948 Type of Manuscript: INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003) Category: Keyword: silicon carbide, SiO₂/4H-SiC interface, C-V characteristics, conductance method, channel mobility,
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FOREWORD Hiroyuki MATSUNAMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/09/25 Vol. E75-C No. 9 pp. 971-971 Type of Manuscript: FOREWORD Category: Keyword:
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Deposition of High-Quality Silicon Dioxide by Remote Plasma CVD Technique Takashi FUYUKI Takeshi FURUKAWA Tohru OKA Hiroyuki MATSUNAMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/09/25 Vol. E75-C No. 9 pp. 1013-1018 Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials) Category: Keyword: remote plasma CVD, SiO₂,
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Direct Photo Chemical Vapor Deposition of Silicon Nitride and Its Application to MIS Structre Masahiro YOSHIMOTO Kenji TAKUBO Takashi SAITO Tetsuya OHTSUKI Michio KOMODA Hiroyuki MATSUNAMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1992/09/25 Vol. E75-C No. 9 pp. 1019-1024 Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials) Category: Keyword: direct photo-CVD, silicon nitride, MIS structure, interface states, rapid thermal anneal,
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