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IEICE Trans

Hironori SAKAMOTO

Modeling of Channel Boron Distribution in Deep Sub-0.1 µm n-MOSFETs
Shigetaka KUMASHIRO Hironori SAKAMOTO Kiyoshi TAKEUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 813-820
Type of Manuscript:  Special Section PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
deep sub-0.1 [µm] n-MOSFET, reverse short channel effect, point-defect pair diffusion model, inverse modeling, 
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