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IEICE Trans

Hirobumi FUKUI

Improvement of PECVD-SiNx for TFT Gate Insulator by Controlling Ion Bombardment Energy
Yasuhiko KASAMA Tadahiro OHMI Koichi FUKUDA Hirobumi FUKUI Chisato IWASAKI Shoichi ONO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/03/25
Vol. E79-C  No. 3  pp. 398-406
Type of Manuscript:  Special Section PAPER (Special Issue on Scientific ULSI Manufacturing Technology)
Category: Device Issues
Keyword: 
TFT, gate insulator, PECVD, ion flux, ion energy, 
 Summary | Full Text:PDF