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IEICE Trans

Hidetoshi FURUKAWA

A High Efficiency GaAs Power Amplifier of 4.6 V Operation for 1.5 GHz Digital Cellular Phone Systems
Akihisa SUGIMURA Kazuki TATEOKA Hidetoshi FURUKAWA Kunihiko KANAZAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1237-1240
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
GaAs FET, power amplifier module, high efficiency, adjacent channel leakage power, π/4-shift OPSK signal, 
 Summary | Full Text:PDF