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IEICE Trans

Helmy FITRIAWAN

Fullband Simulation of Nano-Scale MOSFETs Based on a Non-equilibrium Green's Function Method
Helmy FITRIAWAN Matsuto OGAWA Satofumi SOUMA Tanroku MIYOSHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/01/01
Vol. E91-C  No. 1  pp. 105-109
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
non-equilibrium Green's function, quantum transport, tight-binding approximation, sp3s*, double-gate MOSFETs, Poisson's equation, 
 Summary | Full Text:PDF