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IEICE Trans

Hee-Hwan JI

Thermally Robust Nickel Silicide Process for Nano-Scale CMOS Technology
Soon-Young OH Jang-Gn YUN Bin-Feng HUANG Yong-Jin KIM Hee-Hwan JI Sang-Bum HUH Han-Seob CHA Ui-Sik KIM Jin-Suk WANG Hi-Deok LEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 651-655
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
Ni-silicide, bi-layer capping, ternary phase, nano-scale MOSFET, 
 Summary | Full Text:PDF