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IEICE Trans

Fanghua PU

CMOS Circuits Based on a Stacked Structure Using Silicone-Resin as Dielectric Layers
Kodai KIKUCHI Fanghua PU Hiroshi YAMAUCHI Masaaki IIZUKA Masakazu NAKAMURA Kazuhiro KUDO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/02/01
Vol. E94-C  No. 2  pp. 136-140
Type of Manuscript:  Special Section PAPER (Special Section on Recent Progress in Molecular and Organic Devices)
Category: 
Keyword: 
organic transistor, silicone-resin, polymer gate dielectric, CMOS inverter, stacked structure, 
 Summary | Full Text:PDF