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IEICE Trans

Eunjung CHO

Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4
Sanghyun SEO Eunjung CHO Giorgi AROSHVILI Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1245-1250
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlN, AlN/GaN MISFET, AlN/GaN HFET, wide-bandgap, frequency-dispersion, 
 Summary | Full Text:PDF
Improvement of CO Sensitivity in GaN-Based Gas Sensors
Eunjung CHO Dimitris PAVLIDIS Guangyuan ZHAO Seth M. HUBBARD Johannes SCHWANK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1047-1051
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
GaN, gas sensor, Pt Schottky diode, CO, 
 Summary | Full Text:PDF