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IEICE Trans

Eisuke TOKUMITSU

FOREWORD
Eisuke TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 639-639
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF
FOREWORD
Eisuke TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10  pp. 1655-1655
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF
Ferroelectric Split-Gate-Field-Effect-Transistors for Nonvolatile Memory Cell Array
Hirokazu SAIKI Eisuke TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10  pp. 1700-1705
Type of Manuscript:  Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: Ferroelectric Memory
Keyword: 
ferroelectric-gate transistor, readout current, split-gate, 
 Summary | Full Text:PDF
Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O3 Films Fabricated Using Low-Pressure Consolidation Process
Takaaki MIYASAKO Masaru SENOO Eisuke TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10  pp. 1694-1699
Type of Manuscript:  Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: Ferroelectric Memory
Keyword: 
PZT, sol-gel method, FeRAM, low-pressure consolidation, 
 Summary | Full Text:PDF
Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization
Tatsuya KAMEI Eisuke TOKUMITSU Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4  pp. 577-583
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectric, MFSFET, SrBi2Ta2O9, Si non-volatile memory, memory, 
 Summary | Full Text:PDF