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IEICE Trans

Douglas MACFARLANE

DC and RF Performance of AlN/GaN MOS-HEMTs
Sanna TAKING Douglas MACFARLANE Ali Z. KHOKHAR Amir M. DABIRAN Edward WASIGE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 835-841
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
AlN/GaN, HEMT, MOS-HEMT, Al2O3, wet etching, thermal oxidation, small-signal model, 
 Summary | Full Text:PDF