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IEICE Trans

Dong Hoon SHIN

Comparative Study on Breakdown Characteristics for InGaAs Metamorphic High Electron Mobility Transistor and InGaAs/InP-Composite Channel Metamorphic High Electron Mobility Transistor
Seok Gyu CHOI Jung Hun OH Bok Hyung LEE Byeong Ok LIM Sung Woon MOON Dong Hoon SHIN Sam Dong KIM Jin Koo RHEE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5  pp. 616-621
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
MHEMT, InP-composite channel, impact ionization coefficient, output conductance, 
 Summary | Full Text:PDF | (Errata(Uploaded on July 1,2006))