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IEICE Trans

Dingxin JIN

Analytical Modeling of the Silicon Carbide (SiC) MOSFET during Switching Transition for EMI Investigation
Yingzhe WU Hui LI Wenjie MA Dingxin JIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2019/09/01
Vol. E102-C  No. 9  pp. 646-657
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
silicon carbide (SiC), MOSFET, analytical modelling, electromagnetic interference (EMI), 
 Summary | Full Text:PDF