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IEICE Trans

Chel-Jong CHOI

Electrical and Structural Properties of Metal-Oxide-Semiconductor (MOS) Devices with Pt/Ta2O5 Gate Stacks
Hoon-Ki LEE S.V. Jagadeesh CHANDRA Kyu-Hwan SHIM Jong-Won YOON Chel-Jong CHOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 846-849
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
Ta2O5, MOS, flat band voltage, effective metal workfunction, EOT, 
 Summary | Full Text:PDF