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IEICE Trans

Atsushi SUYAMA

Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation
Hideki MURAKAMI Wataru MIZUBAYASHI Hirokazu YOKOI Atsushi SUYAMA Seiichi MIYAZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 640-645
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
high-k dielectrics, aluminum oxide, reliability, MISFET, 
 Summary | Full Text:PDF