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IEICE Trans

Andreas WIESZT

RF Characterisation and Transient Behaviour of AlGaN/GaN Power HFETs
Helmut LEIER Andrei VESCAN Ron DIETRICH Andreas WIESZT Hardy Hans SLEDZIK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1442-1447
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
AlGaN/GaN, HFET, HEMT, microwave power, 
 Summary | Full Text:PDF