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IEICE Trans

Akira HONSHIO

Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT
Yoshikazu HIROSE Akira HONSHIO Takeshi KAWASHIMA Motoaki IWAYA Satoshi KAMIYAMA Michinobu TSUDA Hiroshi AMANO Isamu AKASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1064-1067
Type of Manuscript:  Special Section LETTER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN HEMT, contact resistance, transconductance, 
 Summary | Full Text:PDF