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IEICE Trans

Akira ASAI

Evaluation of Surface Damage on a Silicon Wafer Induced by Reactive Ion Etching Using X-Ray Photoeloctron Spectroscopy and Electrical Characteristics
Akitaka MURATA Morio NAKAMURA Akira ASAI Ichiro TANIGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9  pp. 990-994
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
XPS, I-V characteristics, RIE with CF4 gas, surface damage, SiF3, CDE with NF3 gas, 
 Summary | Full Text:PDF