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IEICE Trans

Akifumi MARU

Simulation-Based Understanding of “Charge-Sharing Phenomenon” Induced by Heavy-Ion Incident on a 65nm Bulk CMOS Memory Circuit
Akifumi MARU Akifumi MATSUDA Satoshi KUBOYAMA Mamoru YOSHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2022/01/01
Vol. E105-C  No. 1  pp. 47-50
Type of Manuscript:  BRIEF PAPER
Category: Electronic Circuits
Keyword: 
single event upset, charge sharing, device simulation, 65 nm bulk CMOS memory, 
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