An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-μm SOI Process

Mo ZHOU  Yi SHAN  Yemin DONG  

Publication:   IEICE TRANSACTIONS on Electronics
Publicized: 2020/01/07
DOI: 10.1587/transele.2019ECS6017
Full Text: PDF(294.5KB)