Deep-donor-induced suppression of current collapse in an AlGaN-GaN heterojunction structure grown on Si

Taketoshi TANAKA  Norikazu ITO  Shinya TAKADO  Masaaki KUZUHARA  Ken NAKAHARA  

Publication:   IEICE TRANSACTIONS on Electronics
Publicized: 2019/10/11
DOI: 10.1587/transele.2019ECP5011
Full Text: PDF(600.7KB)