Application of Ta2O5 Dielectric Films for Storage Capacitor of Low Power and High Density DRAMs

Hiroshi SHINRIKI  

C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition)   Vol.J100-C   No.10   pp.448-456
Publication Date: 2017/10/01
Online ISSN: 1881-0217
Type of Manuscript: INVITED PAPER (Special Section on IEICE 100th-Anniversary Historical Review on Electronics for Communication)
semiconductor,  dielectric,  tantalum oxide,  DRAM,  CVD,  

Full Text(in Japanese): FreePDF(1.9MB)

In order to realize low power high-density DRAMs beyond 64 megabit, storage dielectric material having relative dielectric constant higher than 20 was inevitable for providing thinner Tox than 3 nm (Tox), which was required for highly reliable operation of the DRAMs against soft error. In this paper, Ta2O5 storage dielectric film among several metal oxides was successfully installed in 64 megabit DRAMs for the first time in the world, leading to accelerate following developments of mass production tool for the storage dielectric films and of gigabit DRAMs having the storage dielectric film with high dielectric constant.