Early Developments of the Research on Microwave Semiconductor Circuits

Kazuhiko HONJO  Yoichiro TAKAYAMA  

Publication
C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition)   Vol.J100-C   No.10   pp.390-399
Publication Date: 2017/10/01
Online ISSN: 1881-0217
Type of Manuscript: INVITED PAPER (Special Section on IEICE 100th-Anniversary Historical Review on Electronics for Communication)
Category: 
Keyword: 
microwave,  active device,  semiconductor circuit,  transistor,  diode,  electron tube,  

Full Text(in Japanese): FreePDF(1.5MB)


Summary: 
Engineering of microwave active circuits is one of the fundamental technologies supporting modern infrastructures such as mobile phone systems, fiber-optic communication systems, radar systems, wireless power transfer systems, and industrial and medical microwave applications. The origin of microwave active circuit technology is strongly related with an electron tube invented 100 years ago. Development of this field has been achieved with the active device invention preceding to its low-frequency circuit applications, and microwave applications. This paper describes the early developments of research on microwave semiconductor circuits where the technology was changed from 3-D metal waveguide circuits to planar semiconductor integrated circuits.