Efficiency Analysis of SiC-MOSFET-Based Bidirectional Isolated DC/DC Converters

Atsushi SAITO  Kenshiro SATO  Yuta TANIMOTO  Kai MATSUURA  Yutaka SASAKI  Mitiko MIURA-MATTAUSCH  Hans Jürgen MATTAUSCH  Yoshifumi ZOKA  

IEICE TRANSACTIONS on Electronics   Vol.E99-C   No.9   pp.1065-1070
Publication Date: 2016/09/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E99.C.1065
Type of Manuscript: PAPER
Category: Electronic Circuits
circuit simulation,  compact model,  DC/DC converter,  SiC-MOSFET,  optimization,  conversion efficiency,  

Full Text: PDF>>
Buy this Article

Circuit performance of SiC-MOSFET-based bidirectional isolated DC/DC converters is investigated based on circuit simulation with the physically accurate compact device model HiSIM_HV. It is demonstrated that the combined optimization of the MOSFETs Ron and of the inductances in the transformer can enable a conversion efficiency of more than 97%. The simulation study also verifies that the possible efficiency improvements are diminished due to the MOSFET-performance degradation, namely the carrier-mobility reduction, which results in a limitation of the possible Ron reduction. It is further demonstrated that an optimization of the MOSFET-operation conditions is important to utilize the resulting higher MOSFET performance for achieving additional converter efficiency improvements.