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Efficiency Analysis of SiC-MOSFET-Based Bidirectional Isolated DC/DC Converters
Atsushi SAITO Kenshiro SATO Yuta TANIMOTO Kai MATSUURA Yutaka SASAKI Mitiko MIURA-MATTAUSCH Hans Jürgen MATTAUSCH Yoshifumi ZOKA
IEICE TRANSACTIONS on Electronics
Publication Date: 2016/09/01
Online ISSN: 1745-1353
Type of Manuscript: PAPER
Category: Electronic Circuits
circuit simulation, compact model, DC/DC converter, SiC-MOSFET, optimization, conversion efficiency,
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Circuit performance of SiC-MOSFET-based bidirectional isolated DC/DC converters is investigated based on circuit simulation with the physically accurate compact device model HiSIM_HV. It is demonstrated that the combined optimization of the MOSFETs Ron and of the inductances in the transformer can enable a conversion efficiency of more than 97%. The simulation study also verifies that the possible efficiency improvements are diminished due to the MOSFET-performance degradation, namely the carrier-mobility reduction, which results in a limitation of the possible Ron reduction. It is further demonstrated that an optimization of the MOSFET-operation conditions is important to utilize the resulting higher MOSFET performance for achieving additional converter efficiency improvements.