Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology

Tian WANG  Xiaoxin CUI  Kai LIAO  Nan LIAO  Xiaole CUI  Dunshan YU  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E99-C   No.8   pp.974-983
Publication Date: 2016/08/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E99.C.974
Type of Manuscript: PAPER
Category: Electronic Circuits
Keyword: 
VLSI,  FinFET,  standard cell,  stacking,  back biasing,  

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Summary: 
With the decrease in transistor feature size, power consumption, especially leakage power, has become a most important design concern. Because of their superior electrical properties and design flexibility, fin-type field-effect transistors (FinFETs) seem to be the most promising option in low-power applications. In order to support the VLSI digital system design flow based on logic synthesis, this paper proposes a design method for low-power high-performance standard cells based on IG-mode FinFETs. Such a method is derived on the basis of appropriately and artfully designing and optimizing the stacked structures in each standard cell, and applying the mixed forward and reverse back-gate bias technique in a well-chosen manner. The proposed method is also applicable when the supply voltage reduces to 0.5V to further reduce the leakage power consumption. By applying this design method, optimized IG-mode FinFET standard cells are generated, and they form a low-power high-performance standard cell library. Simulation results of the library cells indicate that the performance of the standard cells designed with the proposed method can be maintained while reducing leakage consumption by a factor of 58.9 at most. The 16-bit ripple carry adder implemented with this library can acquire up to 17.5% leakage power reduction.