Pseudo-CMOS with Re-Pull-Down Transistor: A Low Power Inverter Design for Thin-Film Transistors

Lihao ZHONG  Ruohe YAO  Fei LUO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E99-C   No.6   pp.727-729
Publication Date: 2016/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E99.C.727
Type of Manuscript: BRIEF PAPER
Category: Electronic Circuits
Keyword: 
Pseudo-CMOS,  low power,  re-pull-down,  thin-film transistor,  

Full Text: PDF>>
Buy this Article




Summary: 
In order to further optimize the power consumption of Pseudo-CMOS inverter, this paper proposes a Re-Pull-Down transistor scheme. Two additional transistors are used to build another pull-down network. With this design, the quiescent current of the inverter can be reduced while the ratioless nature is preserved. Based on the reduced input gate area, two output transistors are set wider to compensate for the pull-up speed. The simulation result shows that, compared with Pseudo-CMOS inverter, the maximum quiescent current of the Re-Pull-Down transistor scheme inverter is reduced by 37.6% in the static analysis. Besides, the average power consumption is reduced by 30.8% in the 5-stage ring oscillator test.