An Application of Laser Annealing Process in Low-Voltage Planar Power MOSFETs

Yi CHEN  Tatsuya OKADA  Takashi NOGUCHI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E99-C   No.5   pp.601-603
Publication Date: 2016/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E99.C.601
Type of Manuscript: BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
low-voltage power MOSFETs,  laser annealing,  shallow junction,  threshold-voltage variation,  electrical characteristics,  

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Summary: 
An application of laser annealing process, which is used to form the shallow P-type Base junction for 20-V planar power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) is proposed. We demonstrated that the fabricated devices integrated with laser annealing process have superior electrical characteristics than those fabricated according to the standard process. Moreover, the threshold voltage variation of the devices applied by the new annealing process is effectively suppressed. This is due to that a uniform impurity distribution at the channel region is achieved by adopting laser annealing. Laser annealing technology can be applied as a reliable, effective, and advantageous process for the low-voltage power MOSFETs.