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An Application of Laser Annealing Process in Low-Voltage Planar Power MOSFETs
Yi CHEN Tatsuya OKADA Takashi NOGUCHI
IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Online ISSN: 1745-1353
Type of Manuscript: BRIEF PAPER
Category: Semiconductor Materials and Devices
low-voltage power MOSFETs, laser annealing, shallow junction, threshold-voltage variation, electrical characteristics,
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An application of laser annealing process, which is used to form the shallow P-type Base junction for 20-V planar power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) is proposed. We demonstrated that the fabricated devices integrated with laser annealing process have superior electrical characteristics than those fabricated according to the standard process. Moreover, the threshold voltage variation of the devices applied by the new annealing process is effectively suppressed. This is due to that a uniform impurity distribution at the channel region is achieved by adopting laser annealing. Laser annealing technology can be applied as a reliable, effective, and advantageous process for the low-voltage power MOSFETs.