300-GHz Amplifier in 75-nm InP HEMT Technology

Hiroshi MATSUMURA  Yoichi KAWANO  Shoichi SHIBA  Masaru SATO  Toshihide SUZUKI  Yasuhiro NAKASHA  Tsuyoshi TAKAHASHI  Kozo MAKIYAMA  Taisuke IWAI  Naoki HARA  

IEICE TRANSACTIONS on Electronics   Vol.E99-C   No.5   pp.528-534
Publication Date: 2016/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E99.C.528
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
InP HEMT,  sub millimeter-wave,  on-wafer TRL calibration,  

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We developed a 300-GHz high gain amplifier MMIC in 75-nm InP high electron mobility transistor technology. We approached the issues with accurate characterization of devices to design the amplifier. The on-wafer through-reflect-line calibration technique was used to obtain accurate transistor characteristics. To increase measurement accuracy, a highly isolated structure was used for on-wafer calibration standards. The common source amplifier topology was used for achieving high gain amplification. The implemented amplifier MMIC exhibited a gain of over 25 dB in the 280-310-GHz frequency band.