For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
300-GHz Amplifier in 75-nm InP HEMT Technology
Hiroshi MATSUMURA Yoichi KAWANO Shoichi SHIBA Masaru SATO Toshihide SUZUKI Yasuhiro NAKASHA Tsuyoshi TAKAHASHI Kozo MAKIYAMA Taisuke IWAI Naoki HARA
IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
InP HEMT, sub millimeter-wave, on-wafer TRL calibration,
Full Text: PDF>>
We developed a 300-GHz high gain amplifier MMIC in 75-nm InP high electron mobility transistor technology. We approached the issues with accurate characterization of devices to design the amplifier. The on-wafer through-reflect-line calibration technique was used to obtain accurate transistor characteristics. To increase measurement accuracy, a highly isolated structure was used for on-wafer calibration standards. The common source amplifier topology was used for achieving high gain amplification. The implemented amplifier MMIC exhibited a gain of over 25 dB in the 280-310-GHz frequency band.