Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage

Norihide KASHIO  Takuya HOSHI  Kenji KURISHIMA  Minoru IDA  Hideaki MATSUZAKI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E99-C   No.5   pp.522-527
Publication Date: 2016/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E99.C.522
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
heterojunction bipolar transistors,  InP,  InGaAsSb,  GaAsSb,  

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Summary: 
This paper investigates current-gain and high-frequency characteristics of double heterojunction bipolar transistors (DHBTs) with a uniform GaAsSb, compositionally graded GaAsSb, uniform InGaAsSb, or compositionally graded InGaAsSb base. DHBTs with a compositionally graded InGaAsSb base exhibit a high current gain of ∼75 and fT=504GHz. In order to boost fmax of DHBTs with a compositionally graded InGaAsSb base, a highly doped GaAsSb base contact layer is inserted. The fabricated DHBTs exhibit fT/fmax=513/637GHz and a breakdown voltage of 5.2V.