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Type-II InGaAsSb-Base Double Heterojunction Bipolar Transistors Simultaneously Exhibiting over 600-GHz fmax and 5-V Breakdown Voltage
Norihide KASHIO Takuya HOSHI Kenji KURISHIMA Minoru IDA Hideaki MATSUZAKI
IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
heterojunction bipolar transistors, InP, InGaAsSb, GaAsSb,
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This paper investigates current-gain and high-frequency characteristics of double heterojunction bipolar transistors (DHBTs) with a uniform GaAsSb, compositionally graded GaAsSb, uniform InGaAsSb, or compositionally graded InGaAsSb base. DHBTs with a compositionally graded InGaAsSb base exhibit a high current gain of ∼75 and fT=504GHz. In order to boost fmax of DHBTs with a compositionally graded InGaAsSb base, a highly doped GaAsSb base contact layer is inserted. The fabricated DHBTs exhibit fT/fmax=513/637GHz and a breakdown voltage of 5.2V.