Low-Temperature Activation in Boron Ion-Implanted Silicon by Soft X-Ray Irradiation

Akira HEYA
Kazuhiro KANDA

IEICE TRANSACTIONS on Electronics   Vol.E99-C    No.4    pp.474-480
Publication Date: 2016/04/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E99.C.474
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
boron dopant,  low-temperature activation,  soft X-ray irradiation,  sheet resistance,  electron excitation,  depth profile,  

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A novel activation method for a B dopant implanted in a Si substrate using a soft X-ray undulator was examined. As the photon energy of the irradiated soft X-ray approached the energy of the core level of Si 2p, the activation ratio increased. The effect of soft X-ray irradiation on B activation was remarkable at temperatures lower than 400°C. The activation energy of B activation by soft X-ray irradiation (0.06 eV) was lower than that of B activation by furnace annealing (0.18 eV). The activation of the B dopant by soft X-ray irradiation occurs at low temperature, although the activation ratio shows small values of 6.2×10-3 at 110°C. The activation by soft X-ray is caused not only by thermal effects, but also electron excitation and atomic movement.