Study on Threshold Voltage Variation Evaluated by Charge-Based Capacitance Measurement

Katsuhiro TSUJI  Kazuo TERADA  Ryo TAKEDA  Hisato FUJISAKA  

IEICE TRANSACTIONS on Electronics   Vol.E99-C    No.4    pp.466-473
Publication Date: 2016/04/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E99.C.466
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
MOSFET,  C-V curve,  CBCM,  threshold voltage,  flat-band voltage,  variation,  

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The threshold voltage variations for actual size MOSFETs obtained by capacitance measurement are compared with those obtained by the current measurement, and their differences are studied for the first time. It is found that the threshold voltage variations obtained by the capacitance measurement show the similar behavior to those current measurement and the absolute value is less than those obtained by the current measurement. The reason for the difference is partially explained by that the local channel dopant non-uniformity along the current path makes the threshold voltage variation obtained from current measurement larger. It is found that the flat-band voltage variations, which are obtained from the measured C-V curves, are small and not significant to the threshold voltage variation.